High charge density and mobility in poly(3-hexylthiophene) using a polarizable gate dielectric

Organic field-effect transistors (OFETs) typically exhibit either a high charge transport mobility or a high charge density. Here we demonstrate an OFET in which both the mobility and the charge density have high values of 0.1 cm2/V s and 28 mC/m2, respectively. The high charge density is induced by the ferroelectric polarization of the gate dielectric poly(vinylidene fluoride/trifluoroethylene). The high mobility is achieved in a regioregular poly(3-hexylthiophene) semiconductor using a transistor with a top-gate layout that inherently exhibits a smooth semiconductor–dielectric interface. The combination of high mobility and charge density yields a record conductance value for polymer-based FETs of 0.3 μS.