Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1266807 | Organic Electronics | 2016 | 6 Pages |
•Isoindigo shows ambipolar transistor properties.•Isoindigo has a variety of crystal structures.•Isoindigo derivatives whose HOMO levels are lower than −5.8 eV do not show hole transport.
Structural and transistor properties of isoindigo derivatives are investigated. The unsubstituted isoindigo affords two polymorphs in addition to the reported brickwork structure; one has a stacking structure analogous to indigo, and another consists of nonplanar molecules. The unsubstituted isoindigo exhibits ambipolar transistor properties with the hole and electron mobilities more than 0.01 cm2/Vs, and 6.6′-diphenylisoindigo shows ambipolar transistor properties with the hole/electron mobilities of 0.037/0.027 cm2/Vs. Isoindigo derivatives with electron withdrawing groups show only electron transport, indicating that the lower limit of the HOMO level showing the hole transport is −5.7 eV.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide