| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1266930 | Organic Electronics | 2016 | 5 Pages |
•Flexible OFETs with TIPS-pentacene:PS blend on HfO2 explored for performance enhancement.•Blend devices exhibit improved performance compared to TIPS-pentacene:PVP bi-layer.•High stability upon mechanical strain with increasing stain% and duration up to 5 days.•Stable dielectric-semiconductor interface in blend devices due to increasing strain.•Very high bias-stress stability in blend devices compared to bi-layer.
Flexible organic field-effect transistors (OFETs) with TIPS-pentacene: polystyrene (PS) blend are demonstrated to exhibit enhanced mobility and significantly improved electrical stability compared to neat TIPS-pentacene on poly(4-vinylphenol) (PVP) dielectric (bi-layer OFETs), along with high mechanical stability. Due to merit of high quality dielectric-semiconductor interface, pristine TIPS-pentacene: PS blend OFETs exhibited maximum mobility of 0.93 cm2 V−1 s−1 with average of 0.44(±0.25) cm2 V−1 s−1 compared to 0.14(±0.10) cm2 V−1 s−1 for bi-layer OFETs with high current on-off ratios on the order 105 for both. Both types of devices exhibited high electrical stability upon bending with increasing magnitude of strain or its duration up to 5 days. However, significant differences in electrical stability of devices were observed upon applying constant bias-stress for 40 min to 1 h. Pristine blend devices exhibited outstanding electrical stability with very low drain current decay of <5% compared to ∼30% for bi-layer devices. Even upon bias-stress after 5 days of bending, the drain current decay levels were only changed to <10% and ∼50% for blend and bi-layer devices respectively.
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