| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1267051 | Organic Electronics | 2016 | 7 Pages |
Abstract
•The strip-off method is a solvent-free method to use nano-imprint for pattern transfer.•A vertical organic transistor with sub-100 nm holes is fabricated by the proposed strip-off nano-imprint.•The solvent-free method reduces the leakage in transistor and the sub-100 nm structure improves the on/off ratio.
A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10−5 mA/cm2 and high ON/OFF current ratio as high as 105.
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Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Xiang Fang, Chia-Ho Lin, Yung-Tai Sun, Huei-Tzu Chin, Hsiao-Wen Zan, Hsin-Fei Meng, Sheng-Fu Horng, Lon A. Wang,