| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1267220 | Organic Electronics | 2015 | 7 Pages |
•An air stable non-volatile hybrid organic–inorganic memory structure is proposed.•High retention times and long-term lifetimes were obtained.•Filamentary conduction is the driving mechanism for the resistive switching.•Metal nanoparticles play a fundamental role in assisting filaments formation.
A non-volatile memory element based on organic/inorganic nanocomposites is presented. The device can be operated in ambient conditions, showing high retention time and long-term life time. The formation/rupture of metallic filaments in the organic matrix is investigated by HR-XPS and ToF-SIMS analysis, and is demonstrated to be the driving mechanism for the resistive switching.
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