| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1267280 | Organic Electronics | 2013 | 7 Pages |
•Hybrid diF-TESADT OTFT, ZnO TFT inverters with sub-pA leakage current and high gain.•Hybrid CMOS inverters have good logic level conservation.•Ink-jet printed diF-TESADT OTFTs with field mobility as large as 0.4 cm2/V s.•Hybrid CMOS inverters fabricated in a 4 mask process plus 1 ink-jet print step.•Low temperature (<200 °C) hybrid CMOS inverter fabrication process.
We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diF-TESADT OTFTs have field effect mobility as large as 0.4 cm2/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (⩽200°C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and sub-pA leakage currents for both low and high input levels.
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