Morphology control of tunneling dielectric towards high-performance organic field-effect transistor nonvolatile memory

We report high-performance organic field-effect transistor nonvolatile memory based on nano-floating-gate, which shows a large memory window of about 70 V, high ON/OFF ratio of reading current over 105 after 1 week storage, high field-effect mobility of 0.6 cm2/V s, and good programming/erasing/reading endurance. The devices incorporate Au nanoparticles and polystyrene layer on top to form the nano-floating-gate, and we demonstrate that the morphology control of the tunneling dielectric is critically significant to improve the memory performance. The optimized tunneling dielectric morphology is favorable to the efficient charge tunneling, reliable charge storage and high-quality organic film growth.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► High-performance OFET memory based on nano-floating-gate is achieved. ► The OFET memory shows large memory window, high ON/OFF ratio and high mobility. ► Incorporation of Au nanoparticles and polystyrene forms the nano-floating-gate. ► Morphology control of tunneling dielectric is critical to memory performance.