Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1267386 | Organic Electronics | 2012 | 9 Pages |
The admittance spectra and current–voltage (I–V) characteristics are reported of metal–insulator–metal (MIM) and metal–insulator–semiconductor (MIS) capacitors employing cross-linked poly(amide–imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan δ values as low as 7 × 10−3 over most of the range. Except at the lowest voltages, the I–V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell–Wagner frequency response from which the transverse bulk hole mobility was estimated to be ∼2 × 10−5 cm2 V−1s−1 or ∼5 × 10−8 cm2 V−1s−1 depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be ∼5 × 1010 cm−2 eV−1 or ∼9 × 1010 cm−2 eV−1 again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Cross-linked PAI thin films produced with excellent electrical properties. ► From 10 Hz to 100 kHz the capacitance of c-PAI MIM capacitors is essentially constant. ► Low tan δ: from 6.8 × 10−3 to 9.3 × 10−3 at 1 kHz (depending on preparation conditions). ► c-PAI supports electric fields in excess of 60 MV/m with low leakage current. ► HMDS surface treatment of c-PAI increases bulk mobility in P3HT by a factor 103.