| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1267421 | Organic Electronics | 2013 | 6 Pages |
We report on the role of cesium fluoride (CsF) doping on the enhanced electron transport properties of tris-(8-hydroxyquinolin) aluminum (Alq3) for organic light-emitting diodes. The electronic structures of CsF-doped Alq3 layers with various doping concentration are characterized by in situ ultraviolet and X-ray photoelectron spectroscopies, showing an n-type electrical doping effect with Fermi level shift towards unoccupied molecular orbital and the formation of chemistry-induced gap-states. The increase in conductivity and reduction in electron injection barrier in CsF-doped Alq3 layer with optimal doping concentration lead to the enhanced electron injection and transport, which are consistent with the improved electrical characteristics of OLEDs.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Optimal doping of CsF leads to enhanced electron injection and transport in OLEDs. ► Doping effect of CsF in organic electron transport layer is studied by UPS and XPS. ► An n-type electrical doping effect is estimated with Fermi level shift towards unoccupied molecular orbital. ► CsF doping results in the chemistry-induced gap state due to the chemical bonding between CsF and Alq3.
