Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes

In this contribution we demonstrate for the first time a downscaled n-channel organic field-effect transistors based on N,N′-dialkylsubstituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) with inkjet printed electrodes. First we demonstrate that the use of a high boiling point solvent is critical to achieve extended crystalline domains in spin-coated thin films and thus high electron mobility >0.1 cm2 V−1 s−1 in top-gate devices. Then inkjet-printing is employed to realize sub-micrometer scale channels by dewetting of silver nanoparticles off a first patterned gold contact. By employing a 50 nm crosslinked fluoropolymer gate dielectric, ∼200 nm long channel transistors can achieve good current saturation when operated <5 V with good bias stress stability.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Downscaling of n-channel organic transistors with inkjet-printed electrodes. ► Mobilities >0.1 cm2 V−1 s−1 in devices with N1400 from a high boiling point solvent. ► The printed Ag contacts show improved electron injection compared to evaporated Au. ► Crisp current saturation achieved for a 200 nm channel length device. ► The submicrometer inkjet printed Ag contacts do not affect the device bias stability.