Complementary-like inverters based on an ambipolar solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative

We report on high-mobility top-gate organic field-effect transistors (OFETs) and complementary-like inverters fabricated with a solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative as the channel semiconductor and a CYTOP/Al2O3 bilayer as the gate dielectric. The OFETs showed ambipolar behavior with average electron and hole mobility values of 1.2 and 0.01 cm2 V−1 s−1, respectively. Complementary-like inverters fabricated with two ambipolar OFETs showed hysteresis-free voltage transfer characteristics with negligible variations of switching threshold voltages and yielded very high DC gain values of more than 90 V/V (up to 122 V/V) at a supply voltage of 25 V.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Top-gate bottom-contact OFETs with ambipolar semiconductor were characterized. ► Average electron mobility value of 1.2 cm2 V−1 s−1 was obtained. ► Average hole mobility value of 0.01 cm2 V−1 s−1 was obtained. ► Complementary-like inverters had hysteresis-free voltage transfer characteristics. ► Inverters had high DC gain values of up to 122 V/V.