| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1267617 | Organic Electronics | 2011 | 5 Pages |
We have observed a rectifying behavior in a lateral symmetrical device structure based on rubrene single crystals. Our analysis shows that the rectifying characteristics are not due to formation of Schottky junction between the electrode and the organic semiconductor, but should be attributed to a mechanism that is similar to the super-linear operation regime in organic field-effect transistors. Furthermore, we have demonstrated that this rectifying behavior can be turned on and off via modulation of the density of space charge in the organic semiconductor/substrate interface, which essentially affects the threshold voltage (VT). Our results demonstrate a simple approach that can potentially be used to fabricate organic rectifiers without application of multi-layer device structure such as MOSFET diode.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Rectifying behavior is observed in a lateral symmetrical device. ► The rectifying property is not due to formation of Schottky contact. ► The rectifying property should be ascribed a mechanism similar to super-linear operation regime in OFETs. ► The rectifying behavior can be turned on and off. ► This demonstrates a simple approach that can potentially be used in organic rectifiers.
