Direct structuring of C60 thin film transistors by photo-lithography under ambient conditions

Direct structuring techniques are an indispensable need for future low-cost applications of organic semiconductor materials in e.g. active matrix displays or integrated circuits. We demonstrate direct structuring of a small molecule organic semiconductor by a photo-lithography lift off process under ambient conditions. To show compatibility of this process, we fabricate organic thin film transistors (OTFT) containing the benchmark electron transporting semiconductor C60 as active material in a top-contact geometry. C60 as electron transporting semiconductor serves as good indicator for contamination and degradation caused by the structuring procedure. To disclose influences of structuring, we discuss the OTFT performance for different channel lengths from 100 μm down to 2.7 μm. In particular, we show that lithography processing gives rise to increased contact resistances. Apart from that, mobility of C60 as material parameter is only weakly affected which underlines the compatibility of the suggested structuring procedure. The potential of this structuring procedure for future integration of driving transistors in active matrix displays is demonstrated.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Fluorine based photo-lithography for direct patterning of C60 thin film transistors. ► Structuring under ambient conditions feasible without loss in OTFT performance. ► Increased contact resistance related to resist residuals. ► Strong derivations of OTFT scaling laws observed by channel length variation.