Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1267676 | Organic Electronics | 2011 | 8 Pages |
We present a simple but effective approach to fabricate high-quality crystalline rubrene thin-film active layers for organic thin-film transistors (OTFTs) based on an abrupt heating process. Through this method, continuous, highly ordered, and highly oriented crystalline rubrene thin films comprising large single-crystalline grains (average size: ∼80 μm) can be remarkably rapidly produced in just 1 min without any dielectric surface modification process. OTFTs with carrier mobility as high as 1.21 cm2 V−1 s−1 and on/off current ratios greater than 106 are demonstrated under air-ambient condition using the approach. These results suggest that our approach is very promising to fabricate high-performance OTFTs for practical applications in organic electronics.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We report an approach to fabricate high-quality crystalline rubrene thin-film active layers based on an abrupt heating process. ► The high-quality crystalline rubrene film can be remarkably rapidly produced without any additional process. ► The rubrene thin-film transistors show carrier mobility as high as 1.21 cm2 V−1 s−1 and on/off current ratios greater than 106 under ambient condition.