Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1267917 | Organic Electronics | 2010 | 5 Pages |
Abstract
We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.
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Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
W.J.M. Naber, M.F. Craciun, J.H.J. Lemmens, A.H. Arkenbout, T.T.M. Palstra, A.F. Morpurgo, W.G. van der Wiel,