Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1267975 | Organic Electronics | 2010 | 5 Pages |
Abstract
Organic field-effect transistors (OFETs) based on regioregular poly(3-hexyl-thiophene) (P3HT) have been demonstrated with improved ambient-air stability. Substrates of untreated SiO2, octadecyltrichlorosilane (OTS)-treated SiO2, and SiO2 coated with a thin layer of polymethylmethacrylate (PMMA) were compared in terms of OFET electric performance and air stability. We are able to show virtually no change in transistor on/off ratio over a 3-day period in ambient air in OFETs fabricated on SiO2-PMMA substrates. We also studied devices based on OTS-treated PMMA interface. By analyzing the surface morphology, possible mechanisms of the enhanced air stability are discussed.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Yanmin Sun, Xiaofeng Lu, Shiwei Lin, Jeff Kettle, Stephen G. Yeates, Aimin Song,