An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene)

An optical programming/electrical erasing memory device was fabricated by adopting organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) as active layers. After illumination, the presence of quantum well-structured core/shell CdSe@ZnSe QDs within the P3HT film enhanced the maximum ON/OFF ratio substantially to 2700; this value was maintained for 8000 s without noticeable decay. The ON state current could be erased effectively when using a single pulse of the gate voltage (−10 V). This fabrication approach opens up the possibility of improving the memory performance of polymeric materials prepared at low cost using simple processes.