| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1268550 | Organic Electronics | 2008 | 7 Pages |
Abstract
A model of the equilibrium 2D hopping mobility in a disordered organic semiconductor is formulated for arbitrary charge carrier densities and arbitrary temperatures. The calculated dependence of the 2D mobility upon inverse temperature is compared with experimental data obtained on 2D carrier transport in poly(3-hexylthiophene) thin film field-effect transistors.
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Chemistry (General)
Authors
E.V. Emelianova, M. van der Auweraer, G.J. Adriaenssens, A. Stesmans,