Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1268567 | Organic Electronics | 2008 | 6 Pages |
Abstract
Air stable n-type organic field effect transistors (OFETs) based on C60 are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of 0.049 cm2/V s in ambient air. Replacing the gate dielectric material by SiO2 resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in air.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Junhyuk Jang, Ji Whan Kim, Nohhwal Park, Jang-Joo Kim,