Article ID Journal Published Year Pages File Type
1297213 Solid State Ionics 2006 7 Pages PDF
Abstract

Deposition of yttria-stabilized zirconia films on surface oxidized Ni wire substrate by chemical vapor infiltration (CVI) using ZrCl4 and YCl3 as metal sources and NiO as oxygen source were studied. The resultant films were cubic crystals of YSZ with a Y2O3 content of 1.0–3.7 mol%. The growth rate is larger than that obtained by conventional method of chemical vapor deposition (CVD), increased with the flow rate and decreased with diameter of NiO fiber. The growth rate above its thickness of 4 μm decreased with an increase in the oxidation temperature since the porosity of NiO wire might decrease with an increase in the oxidation temperature. Growth of YSZ films with the CVI method simultaneously involved CVD and electrochemical vapor deposition (EVD).

Related Topics
Physical Sciences and Engineering Chemistry Electrochemistry
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