Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1297218 | Solid State Ionics | 2006 | 6 Pages |
Abstract
The bulk defect structure in Cr2−xTixO3 (x = 0.05, 0.20 and 0.30) has been studied by X-ray absorption spectroscopy measurements at the Cr and Ti K-edges. The results show that the Ti is predominantly present in the IV oxidation state and resides on the normal Cr host lattice site. The dopant is charge compensated by Cr3+ vacancies and there is evidence for the formation of defect clusters; however, the detailed structure of these clusters could not be deduced.
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Authors
Aran N. Blacklocks, Alan Atkinson, Robert J. Packer, Shelley L.P. Savin, Alan V. Chadwick,