Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1297433 | Solid State Ionics | 2007 | 7 Pages |
Abstract
The study of the doping process of Bi2Te3 by Pb atoms in wide range of lead concentration ((1.0–80.0) × 1018 cm− 3) revealed two distinct areas of influence of the incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb (up to 20 × 1018 Pb atoms cm− 3) the ratio of generated holes to one incorporated Pb atom — Δp/cPb — falls from value of 1.06 down to 0.55, at higher concentration ((20–80) × 1018 Pb atoms cm− 3) the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
T. Plecháček, J. Navrátil, J. Horák, D. Bachan, A. Krejčová, P. Lošťák,