Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1297497 | Solid State Ionics | 2006 | 4 Pages |
Abstract
Thin films of La1.61GeO5âδ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al2O3 substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La1.61GeO5âδ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La1.61GeO5âδ thin films. It was also found that the annealed La1.61GeO5âδ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La1.61GeO5âδ thin films increased with the decreasing thickness as compared to that in bulk La1.61GeO5âδ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La1.61GeO5âδ film with a thickness of 373 nm is as high as 0.05 S cmâ 1 (log(Ï/S cmâ 1) = â 1.3) at 573 K.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Tatsumi Ishihara, Jingwang Yan, Hiroshige Matsumoto,