| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1297504 | Solid State Ionics | 2006 | 4 Pages |
Abstract
The defects in Cr2−xTixO3 (x = 0, 0.2 and 0.3) were studied by a combination of X-ray diffraction, density and electrical conductivity measurements supported by atomistic simulation. The results are consistent with the Ti being dissolved as Ti4+ compensated by Cr vacancies which associate to form complex defects of lower energy. Ti doping gives n-type semiconductivity due to a small concentration of Ti3+ in equilibrium with the complexes.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Alan Atkinson, Mark R. Levy, Severine Roche, Robert A. Rudkin,