Article ID Journal Published Year Pages File Type
1298607 Solid State Ionics 2005 4 Pages PDF
Abstract
Measurements of the admittance of Ag/TiW-(Ti-V-Pd) oxide-Si structure as a function of frequency at fixed measurement conditions (i.e. gate voltages, temperature, humidity and light illumination) have been performed and a large dispersion in the measurement results has been observed. The analysis of experimental spectra on the basis of electrical equivalent circuit model, consisting of resistors, capacitors and constant phase elements, has enabled us to identify three relaxation processes attributed to the physical phenomena in different regions of the examined structure.
Related Topics
Physical Sciences and Engineering Chemistry Electrochemistry
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