Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1307143 | Inorganica Chimica Acta | 2009 | 4 Pages |
Abstract
The complex Hf[N(SiMe2H)2]4 was synthesized, structurally characterized, and used as a precursor with oxygen to prepare hafnium silicate thin films at substrate temperatures ⩾500 °C in a low-pressure CVD process. The as-deposited films were amorphous, and they remained amorphous upon annealing up to 1100 °C.
Graphical abstractTetrakis(bis(dimethylsilyl)amido)hafnium and oxygen produce amorphous hafnium silicate films in a low-pressure CVD process.Figure optionsDownload full-size imageDownload as PowerPoint slide
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Physical Sciences and Engineering
Chemistry
Inorganic Chemistry
Authors
Edixa de L. Jiménez, Saba Javed, David M. Hoffman,