Article ID Journal Published Year Pages File Type
1307143 Inorganica Chimica Acta 2009 4 Pages PDF
Abstract

The complex Hf[N(SiMe2H)2]4 was synthesized, structurally characterized, and used as a precursor with oxygen to prepare hafnium silicate thin films at substrate temperatures ⩾500 °C in a low-pressure CVD process. The as-deposited films were amorphous, and they remained amorphous upon annealing up to 1100 °C.

Graphical abstractTetrakis(bis(dimethylsilyl)amido)hafnium and oxygen produce amorphous hafnium silicate films in a low-pressure CVD process.Figure optionsDownload full-size imageDownload as PowerPoint slide

Related Topics
Physical Sciences and Engineering Chemistry Inorganic Chemistry
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