Article ID Journal Published Year Pages File Type
1328436 Journal of Organometallic Chemistry 2006 7 Pages PDF
Abstract
The electronic structures at the ground and low-lying excited states of permethyloligosilane radical cations, Sin(CH3)2n+2+ (n = 4-7), have been investigated using DFT and ab initio calculations. Models of hole transport in oligosilane radical cation are proposed on the basis of theoretical results. The hole transport ay thermal condition and hole transport caused by photo-irradiation have been proposed.
Related Topics
Physical Sciences and Engineering Chemistry Inorganic Chemistry
Authors
, ,