Recrystallization of Cu-poor CuInS2 assisted by metallic Cu or Ag

We monitor the recrystallization of Cu-poor CuInS2 thin films assisted by pure Cu or pure Ag by means of real-time synchrotron-based polychromatic X-ray diffraction. In both cases a new microstructure is formed accompanied by an increase in grain size. In the case of Cu, the onset temperature of the thin-film recrystallization is higher than 370 °C. In the case of Ag, the thin-film recrystallization comes to an end at 270 °C. The Ag-assisted recrystallization occurs in the presence of the body-centered cubic β-Ag2S phase. We find that domain growth and diffusion of silver into the film occur simultaneously.

Graphical abstract Keywords: Recrystallization; Thin-film solar cells; Energy-dispersive x-ray diffractionIn-situ monitoring by means of energy-dispersive X-ray diffraction of the thin-film recrystallization of Cu-poor CuInS2 assisted by metallic Ag.Figure optionsDownload full-size imageDownload as PowerPoint slide