| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1329316 | Journal of Solid State Chemistry | 2009 | 4 Pages |
Abstract
We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al2O3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 °C.
Related Topics
Physical Sciences and Engineering
Chemistry
Inorganic Chemistry
Authors
J. Ohta, K. Sakurada, F.-Y. Shih, A. Kobayashi, H. Fujioka,