| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1329687 | Journal of Solid State Chemistry | 2016 | 6 Pages |
•Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb0.6Sn0.4Te.•Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T.•Linear magnetoresistance in Pb0.6Sn0.4Te is mainly governed by the spatial fluctuation of the carrier mobility.
Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb0.6Sn0.4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb0.6Sn0.4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor.
Graphical abstractLarge non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb0.6Sn0.4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T.Figure optionsDownload full-size imageDownload as PowerPoint slide
