| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1329877 | Journal of Solid State Chemistry | 2014 | 6 Pages |
•The solid-state In/Ge selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4 have been synthesized.•Both Cs4In8GeSe16 and CsInGeSe4 display In/Ge disorder.•Cs4In8GeSe16 and CsInGeSe4 have band gaps of 2.20 eV and 2.32 eV, respectively.
The three solid-state indium/germanium selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4 have been synthesized at 1173 K. The structure of Cs4In8GeSe16 is a three-dimensional framework whereas those of CsInSe2 and CsInGeSe4 comprise sheets separated by Cs cations. Both Cs4In8GeSe16 and CsInGeSe4 display In/Ge disorder. From optical absorption measurements these compounds have band gaps of 2.20 and 2.32 eV, respectively. All three compounds are charge balanced.
Graphical abstractStructure of Cs4In8GeSe16Figure optionsDownload full-size imageDownload as PowerPoint slide
