The impact on the magnetic field growth of half-metallic Fe3O4 thin films

Half-metallic Fe3O4 films grown on a Si (100) substrate with a tantalum (Ta) buffer layer were prepared by DC magnetron reactive sputtering. Primary emphasis was placed on magnetic field growth of Fe3O4 thin film. The experiment's results showed that applying an external magnetic field to the samples during the growth was efficient to promote the polycrystalline Fe3O4 growth along certain directions. The magnetoresistance (MR) was also tested for comparison of the samples prepared with and without an external magnetic field, and showed that applying an external magnetic field can promote the MR values.

Graphical AbstractXRD patterns of polycrystalline Fe3O4 films growth (a) without and (b) with an external magnetic field.Figure optionsDownload full-size imageDownload as PowerPoint slide