| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1330560 | Journal of Solid State Chemistry | 2013 | 4 Pages |
•The new compound Th2GeSe5 was synthesized from the elements and recrystallized from Sb2Se3.•Th2GeSe5 crystallizes in the Ba5Si3 structure type.•The band gap of Th2GeSe5 is1.92 eV and its resistivity shows it to be a wide gap semiconductor.
The compound Th2GeSe5 has been synthesized by the reaction of the elements at 1273 K. From a single-crystal study Th2GeSe5 crystallizes in the Ba5Si3 structure type with four formula units in the space group D84h−P4/ncc of the tetragonal system in a cell with dimensions a=7.4968(4) Å and c=13.6302(9) Å at 100(2) K. From optical absorption measurements Th2GeSe5 is found to have an optical band gap of 1.92 eV (indirect) or 1.98 eV (direct), consistent with its red color. Th2GeSe5 is a wide gap semiconductor, as indicated by its electrical resistivity at 298 K of 4.37(2)×109 Ω cm measured on a single crystal.
Graphical abstractThe structure of Th2GeSe5.Figure optionsDownload full-size imageDownload as PowerPoint slide
