Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1331075 | Journal of Solid State Chemistry | 2010 | 4 Pages |
Abstract
Pb0.4Sr0.6TiO3 (PST) thin films doped with various concentration of Bi were prepared by a sol–gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2 Graphical abstractThe Bi-doped Pb0.4Sr0.6TiO3 (PST) thin films prepared by the sol–gel method showed a PST/Bi2Ti2O7 biphase structure for 0.2
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Authors
X.T. Li, P.Y. Du, Y.L. Zhao, Y. Tu, J.L. Dai, W.J. Weng, G.R. Han, C.L. Song,