Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1332153 | Journal of Solid State Chemistry | 2008 | 9 Pages |
The 6H BaRu1−xMnxO3 with the hexagonal BaTiO3 structure was synthesized using high-pressure sintering method. It is found that the lattice parameter deviates from Vegard's law at x=0.3 for the solid solutions due to the charge transfer effects at B-site. The substitution of Mn for Ru cations gives rise to the short-range magnetic ordering, due to the disordered arrangement of Ru and Mn cations. The compounds are weak ferromagnetic in the x range 0.05–0.40, with the maximal Curie temperature Tc 175.2 K at x=0.10. They are of spin-glass-like magnetism at lower temperature at x⩾0.1. With Mn doping, the 6H BaRuO3 transforms to a semiconductor from the primal metal at x=0.30. The resistance as a function of temperature below about 70 K follows the two-dimensional variable-range hopping conduction mechanism in BaRu0.50Mn0.50O3.
Graphical abstractThe 6H BaRu1−xMnxO3 was synthesized using high-pressure sintering. The substitution of Mn for Ru cations gives rise to the short-range magnetic ordering, with the maximal Curie temperature Tc 175.2 K at x=0.10. The compounds are of spin-class magnetism at lower temperature at x⩾0.05. Mn doping results in the transition from the primal metal to semiconductor at x=0.30.Figure optionsDownload full-size imageDownload as PowerPoint slide