Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

CuWO4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO4 thin-films was determined over 100–500 °C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300 °C and 500 °C have been measured for oxygen partial pressures (0.1 atm

Graphical abstractFormation of oxygen states in n-type semiconducting metal-oxides and its effect on the surface electrochemical potential and electron transport.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► The study of surface species in CuWO4 thin-films was carried using conductometry. ► The determination of the apparent activation energy of conduction with temperature is outlined. ► Temperature and O2 concentration effects on the oxygen states was established. ► For the ranges of temperature studied, the identified operating oxygen states were O2− and O−.