Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6

The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01–1 atm. A −16 power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction.

Graphical abstractTemporal dependence of electrical conductivity at 500 °C for γ′-Bi2MoO6 at controlled partial pressures of oxygen.Figure optionsDownload full-size imageDownload as PowerPoint slide