Mg-doping experiment and electrical transport measurement of boron nanobelts

We measured electrical conductance of single crystalline boron nanobelts having α-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. The pure boron nanobelt is a p-type semiconductor and its electrical conductivity was estimated to be on the order of 10–3 (Ω cm)−1 at room temperature. The carrier mobility of pure boron nanobelt was measured to be on the order of 10−3 (cm2 Vs−1) at room temperature and has an activation energy of ∼0.19 eV. The Mg-doped boron nanobelts have the same α-tetragonal crystalline structure as the pristine nanobelts. After Mg vapor diffusion, the nanobelts were still semiconductor, while the electrical conductance increased by a factor of 100–500. Transition to metal or superconductor by doping was not observed.

Graphical abstractSEM micrographs of boron nanobelt after Ni/Au electrode fabrication by electron beam lithography.Figure optionsDownload full-size imageDownload as PowerPoint slide