| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1413868 | Carbon | 2014 | 9 Pages |
Abstract
The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage (VgVg) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in the carrier density (n ) in the sample near surface region and under different values of VgVg at room temperature. Transport measurements on different MLG samples reveal that under a large enough applied electric field these regions undergo a superconducting-like transition at T≲17T≲17 K. A magnetic field applied parallel or normal to the graphene layers suppresses the transition without changing appreciably the transition temperature.
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Energy (General)
Authors
A. Ballestar, P. Esquinazi, J. Barzola-Quiquia, S. Dusari, F. Bern, R.R. da Silva, Y. Kopelevich,