| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1415265 | Carbon | 2012 | 5 Pages |
Abstract
We demonstrate a field-effect nonvolatile random access memory (NVRAM) device made of a graphene nanoribbon (GNR) and a multiferroic epitaxial BiFeO3 thin film. The GNR and the source/drain electrodes were formed by position-controlled dip-pen nanolithography. The NVRAM device exhibited asymmetric hysteresis behavior originating from the combination of the p-type semiconducting behavior of the GNR and the ferroelectric hysteresis of the BiFeO3 layer. The memory window of the NVRAM device was significantly improved by a NH3 annealing process which changed the p-type GNR to n-type.
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Energy (General)
Authors
I. Jung, J.Y. Son,