Characterization of doped single-wall carbon nanotubes by Raman spectroscopy

Single-wall carbon nanotubes were grown by thermal chemical vapor deposition using either boron- or nitrogen-containing feedstocks or both. Carrier doping was evidenced by hardenings of the G band in Raman spectra, and the estimated carrier concentration reached ∼0.4%. In the G′ and D band spectra, a doping-induced component was observed at the high- or low-energy side of the original one. However, the appearance of the new component did not always coincide with the carrier doping. The doped SWCNTs often show radial breathing mode peaks in the off-resonance region, indicating a defect-induced modification of absorption spectrum.