Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1416502 | Carbon | 2011 | 6 Pages |
The potential applications of carbon nanotubes grown for semiconductor and sensor devices are immense. But, this growth must be CMOS compatible and over large-areas, in excess of 4 inches in diameter, for any industrial interest. Reports of low-temperature growth of carbon nanotubes have mostly resulted in false dawns in the context of CMOS production, with direct integration for mass manufacturing remaining a challenge, as lower synthesis temperatures matched to manufacturing result in nanotubes with high defect levels. We report a unique ‘top-down’ synthesis method that allows energy delivery directly to the catalyst, resulting in higher quality nanotube growth at compatible low substrate temperatures. This growth is demonstrated over a large-area, whilst maintaining the silicon substrate below 350 °C. Long-range ordering of carbon nanotubes is supported by well developed second-order Raman peaks and HREM. The methodology developed is suitable to produce many nano-material systems, including graphene and silicon nanowires.
Graphical abstractA radical novel design concept for the growth of carbon nanotubes over large-area using a top-down CVD process allows high energy delivery to the catalyst whilst maintaining the substrate below 350 °C. Raman, EELS and HREM confirm the quality of the nanotubes is comparable with conventional catalytic nanotube growth at temperatures above 700 °C.Figure optionsDownload full-size imageDownload as PowerPoint slideResearch highlights► Effective energy delivery precisely to catalyst improves CNT growth at low-temperatures. ► The energy is delivered to the catalyst using infrared illumination. ► Thermal energy management via infrared reflector and thermal barrier layers. ► Quality of catalytic CNT growth over large-areas below 350 °C comparable to those at 700 °C.