| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1419219 | Carbon | 2006 | 4 Pages |
Abstract
Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a ‘p–n junction’ is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current–voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p–n junction.
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Authors
Jingqi Li, Qing Zhang, Mary B. Chan-Park,