Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1429289 | Materials Science and Engineering: C | 2011 | 6 Pages |
Abstract
Understanding and controlling charge transport are crucial to achieve optimized organic devices, including light emitting diodes. In this study, we investigate the charge injection in devices made with a hybrid composite (HC) containing Zn2SiO4:Mn (ZSP:Mn) in a polymeric blend consisting of poly(o-methoxyaniline) (POMA) and poly(vinylidene co-trifluorethylene) P(VDFTrFE), with the architecture ITO/HC/metallic electrode (ME). Charge injection was found to depend mainly on the POMA semiconducting phase. For ITO/HC/Au, an Ohmic junction was observed because the work function of ITO is close to that of Au, which also matches the energy levels of HC. Holes are injected through the HC/Au junction, as the highest occupied molecular orbital (HOMO) level of POMA matches the Fermi level of Au. The impedance spectroscopy data for the ITO/HC/ME devices were analyzed with a theoretical model where charge injection was assumed to occur via hopping with a distribution of potential energy barriers. The average hopping distance was estimated as 5.5Â Ã
and only the device with the Al electrode had the current limited by the interface mechanism (charge injection). For ITO/HC/Cu and ITO/HC/Au devices the limiting factor for the charge transport was the bulk resistance of the samples, in spite of the existence of a small interface energy barrier. The disorder parameter was 0.18 and 0.19 for the HC/Cu and HC/Al interfaces, respectively, which arises from the disordered nature of the hybrid material. The combination of the Cole-Cole model and the Miller-Abrahams function are a good approach to describe charge a.c. injection processes in disordered materials.
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Authors
G. Gozzi, D.L. Chinaglia, T.F. Schmidt, O.N. Jr.,