Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1430588 | Materials Science and Engineering: C | 2006 | 6 Pages |
Abstract
We have studied 5 MeV Au2+ ion implantation with fluences between 7 Ã 107 and 2 Ã 108 cmâ 2 in Si by deep level transient spectroscopy (DLTS) and scanning capacitance microscopy (SCM). The DLTS measurements show formation of electrically active defects such as the two negative charge states of the divacancy (V2(/-) and V2(-/0)) and the vacancy-oxygen (VO) center. It is observed that the intensity of the V2(/-) peak is lower compared to that of V2(-/0) by a factor of 5. This has been attributed to a highly localized distribution of the defects along the ion tracks, which results in trapping of the carriers at V2(-/0) and incomplete occupancy of V2(/-). The SCM measurements obtained in a plan view show a random pattern of regions with a reduced SCM signal for the samples implanted with fluence above 2 Ã 108 cmâ 2. The reduced SCM signal is attributed to extra charges associated with acceptor states, such as V2(-/0), formed along the ion tracks in the bulk Si. Indeed, the electron emission rate from the V2(-/0) state is in the range of 10 kHz at room temperature, which is well below the probing frequency of the SCM measurements, resulting in “freezing” of electrons at V2(-/0).
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Authors
L. Vines, E. Monakhov, K. Maknys, B.G. Svensson, J. Jensen, A. Hallén, A. Yu. Kuznetsov,