Structural characterization of β-SiC nanowires synthesized by direct heating method

Crystal structure of β-SiC nanowires was investigated using Raman spectroscopy, FT-IR, XRD, transmission electron microscopy and selected area electron diffraction. Cubic β-SiC nanowires were synthesized by heating NiO catalyzed Si substrates with WO3 and graphite mixed powders in the growth temperature of 1000–1100 °C. HRTEM image showed atomic arrangements of the grown SiC nanowires with a main growth direction of [111]. Raman spectra showed two characteristic peaks at 796 cm− 1 and 968 cm− 1, which are corresponding to transversal optic mode and longitudinal optic mode of β-SiC, respectively. Also, FT-IR absorption spectroscopy showed a SiC characteristic absorption band at ∼792 cm− 1.