| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1430629 | Materials Science and Engineering: C | 2006 | 4 Pages |
Abstract
Photoluminescence, magnetophotoluminescence, and atomic force microscopy were used for the characterization of MOVPE prepared InAs/GaAs quantum dots. Significant differences in the behaviour of the first excited photoluminescence transition in magnetic field are explained by the different lateral shape of quantum dots. While the first excited luminescence peak of circular quantum dots splits with increasing magnetic field into two peaks, no splitting occurs for quantum dots with elliptic shape, only small red shift is observed. Theoretical calculations of energy levels in InAs/GaAs quantum dots with circular and elliptical shape with different elongations are presented and compared with experimental results.
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Authors
K. Kuldová, V. Křápek, A. Hospodková, O. Bonaventurová Zrzavecká, J. Oswald, E. Hulicius, J. Humlíček,