Article ID Journal Published Year Pages File Type
1430655 Materials Science and Engineering: C 2006 5 Pages PDF
Abstract

Thin films of perovskite (Ba,Sr)TiO3 (BST) system are promising candidates for microelectronic devices that can be integrated into semiconductor technology. The lead-free solid solution BaxSr1−xTiO3 is a high permittivity dielectric material with low loss and suitable for use in dynamic random access memory cells, tunable microwave devices, by-pass capacitors and infrared detectors. A versatile and cost-effective Electrostatic Spray Assisted Vapour Deposition (ESAVD) process has been used to fabricate nanostructured BST film. The crystal structure, surface morphology and homogeneity of composition of BST thin films have been investigated using a combination of XRD, SEM, AFM, Raman spectroscopy and XPS techniques.

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