Article ID Journal Published Year Pages File Type
1431050 Materials Science and Engineering: C 2008 4 Pages PDF
Abstract
Recently, oxide semiconductor material used as transducer has been the central topic of many studies for gas sensor. In this paper we investigated the characteristic of a thick film of tin dioxide (SnO2) film for chemical vapor sensor. It has been prepared by screen-printing technology and deposited on alumina substrate provided with two gold electrodes. The morphology, the molecular composition and the electrical properties of this material have been characterized respectively by Atomic Force Spectroscopy (AFM), Fourier Transformed Infrared Spectroscopy (FTIR) and Impedance Spectroscopy (IS). The electrical properties showed a resistive behaviour of this material less than 300 °C which is the operating temperature of the sensor. The developed sensor can identify the nature of the detected gas, oxidizing or reducing.
Related Topics
Physical Sciences and Engineering Materials Science Biomaterials
Authors
, , , , ,