| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1431066 | Materials Science and Engineering: C | 2008 | 4 Pages |
Abstract
The aim of this work is to study the origin of parasitic effects observed on the output characteristics of InAlAs/InGaAs/InP HEMTs with various buffer layers. Ids − Vds measurements as a function of the temperature have first been performed. Several anomalies were observed such as kink and hysteresis effects. C-DLTS measurements have also been performed. From the obtained results, we have established a strong correlation between parasitic effects observed on the output characteristics and deep levels located near the buffer layer interface.
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Authors
S. Bouzgarrou, Na. Sghaier, M.M. Ben Salem, A. Souifi, A. Kalboussi,